Engineering Photoluminescence with Mie Voids

Abstract

Spontaneous emission, as a fundamental radiative process and a versatile information carrier, plays a vital role in light-emitting devices, optical information modulation and encryption, super-resolution fluorescence imaging. Engineering the photonic environment surrounding photon emitters enables control over their emission properties. However, simultaneously achieving precise engineering of both excitation enhancement and quantum-yield modulation at the nanoscale remains elusive, highlighting substantial room for advancing the precise orchestrating of photoluminescence. Here, we introduce silicon Mie voids - air-defined cavities that invert the conventional solid-particle geometry - to achieve independent tuning of photoluminescence within a single subwavelength unit, while minimizing optical losses. Full-wave simulations and experiments on both gradient and uniform Mie-void arrays jointly validate this quantitative framework for spontaneous emission tuning, which disentangles excitation enhancement arising from local field confinement in air and quantum-yield enhancement resulting from strengthened emitter-resonator coupling, while confirming the accelerated radiative decay enabled by the modified optical LDOS. Leveraging this flexible mechanism, we realize a multimodal nanophotonic pattern with near-diffraction-limited pixels that encode the EPFL logo in the bright field and the SJTU logo in both dark field and photoluminescence maps. These results establish Mie voids as a powerful platform for high-density multimodal encrypted displays and open new avenues for advancing state-of-the-art nanophotonic devices.