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arXiv · 2602.11614

Device-Circuit Co-Design of Variation-Resilient Read and Write Drivers for Antiferromagnetic Tunnel Junction (AFMTJ) Memories

Yousuf Choudhary·Tosiron Adegbija
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Abstract

Antiferromagnetic Tunnel Junctions (AFMTJs) offer picosecond switching and high integration density for in-memory computing, but their ultrafast dynamics and low tunnel magnetoresistance (TMR) make state-of-the-art MRAM interfaces unreliable. This work develops a device-circuit co-designed read/write interface optimized for AFMTJ behavior. Using a calibrated SPICE AFMTJ model as a baseline, we identify the limitations of conventional drivers and propose an asymmetric pulse driver (PD) for deterministic picosecond switching and a self-timed sense amplifier (STSA) with dynamic trip-point tuning for low-TMR sensing. Our experiments using SPICE and Monte Carlo evaluations demonstrate that the proposed circuits preserve AFMTJ latency and energy benefits while achieving robust read/write yield under realistic PVT and 3D integration parasitics, outperforming standard MRAM front-ends under the same conditions.

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Yousuf Choudhary, Tosiron Adegbija. 2026-02-12. Device-Circuit Co-Design of Variation-Resilient Read and Write Drivers for Antiferromagnetic Tunnel Junction (AFMTJ) Memories. https://arxiv.org/abs/2602.11614

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