SearcharxivSearch

arXiv · 2602.18222

Electrodynamics of swift-electron momentum transfer to a large spherical nanoparticle

Abstract

Swift electrons from highly focused beams produced in aberration-corrected scanning transmission electron microscopes offer a powerful route for probing and manipulating matter at the nanoscale. Although linear momentum transfer from swift electrons to nanoparticles has been investigated theoretically and experimentally, subsequent analyzes revealed that several earlier predictions relied on non-causal dielectric functions or insufficient numerical convergence, leading to spurious sign reversals in the transferred momentum. Here, we derive analytical expressions and develop a numerically efficient electrodynamic framework to compute the linear momentum transferred from a swift electron to an isolated spherical nanoparticle described by a fully causal, local dielectric response. We apply our framework to large nanoparticles with 50 nm radius and explicitly resolve the spectral density of linear momentum transfer across the full frequency domain. Using causal dielectric functions for aluminum and bismuth, we analyze the role of electron velocity, impact parameter, and material-specific resonances. We find that, when causality and full multipolar convergence are enforced, the net transverse linear momentum transferred to spherical nanoparticles remains attractive toward the electron trajectory for all nanoparticles considered, despite the presence of material-dependent sign changes in individual electric and magnetic contributions. These results contrast with earlier theoretical predictions of net repulsive behavior and indicate that additional physical mechanisms beyond the present isolated, local description are required to account for experimentally observed repulsion. Our work establishes a robust reference framework for momentum transfer calculations and provides quantitative benchmarks relevant for electron-beam-based nanoscale manipulation.

Explore related subjects

Keep this discovery

BibTeXRIS

Jesús Castrejón-Figueroa, Jorge Luis Briseño-Gómez, Eduardo Enrique Viveros-Armas, José Ángel Castellanos-Reyes, Alejandro Reyes-Coronado. 2026-02-20. Electrodynamics of swift-electron momentum transfer to a large spherical nanoparticle. https://arxiv.org/abs/2602.18222

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Emergence of spin-orbit coupling among spin, atomic orbital, and Bloch dynamics in Janus double-transition-metal MXenes

We found a spin-orbit coupling to cause a simultaneous correlation among three degrees of freedom, the electronic spin, orbital, and Bloch dynamics in an investigation into the electronic structure of Janus double-transition-metal MXenes, Mo$_2$HfC$_2$OS and W$_2$HfC$_2$OS. In this paper, it is also revealed that the spin-orbit coupling causes a staggered spin configuration with a trigonal pattern around the $\Gamma$ point near the insulating gap. We developed a reduced Hamiltonian describing the electronic states and show that the spin-orbit coupling cannot be equated with conventional forms for a single electron in solids, LS, Rashba, and Dresselhaus couplings, even in the approximation under the low-energy and small wave number condition. Because of the intrinsic shape of the conduction band, a trigonally alternating spin-momentum locking emerges with the spin axis perpendicular to the layer plane. The theoretical analysis shows that these Janus materials can provide a platform for exploring the spin-related phenomena due to the trigonal spin-momentum locking other than Rashba and Dresselhaus types.

cond-mat.mes-hall

A substrate booster for P-type 2D ferromagnetic semiconductor

Spin transistors with its both charge and spin properties tuned via electrostatic gating are believed capable for widespread use, which however have proven challenging due to the extreme rareness of their physical base -- magnetic semiconductors. The latter are limited within very few systems including diluted magnetic semiconductors (DMS) and two-dimensional ferromagnetic semiconductors (2D-FMS), and known to suffer from inadequate gate-tunability of their electric and/or magnetic properties. Here, we show a substrate engineering paradigm by interfacing few-layered Cr$_{2}$Ge$_{2}$Te$_{6}$ (FL-CGT) with an antiferromagnetic insulator CrOCl. Owing to the subtle interfacial charge transfer couplings, CGT can be drastically turned from an ambipolar semiconductor into a high performance P-type semiconductor. When cooled below the Curie temperature, the ON-OFF ratio in such substrate-boosted FMS field-effect transistor (FET) reaches 10$^{5}$ with its coercive field $H_{c}$ of magnetic hysteresis loop tunable by a factor of more than 200$\%$, enabling {gate-assisted magnetic switching in the prototype semiconducting spin transistor architecture}. A crossover from critical power-law scaling to a dual power-law behaviour under heavy hole doping was further observed. Our findings {signify} an efficient interfacial charge transfer and electrically modulated magnetic anisotropy energy supported by calculations. This high performance P-type FMS-FET system suggests that active substrate-boosting paradigm might be a powerful path for the investigation of future gate-tunable spintronic devices.

cond-mat.mes-hall

In-plane magnetic field control of anomalous Hall response enabled by magnetic anisotropy engineering

Engineering magnetic anisotropy provides a powerful route to control magnetization orientation and unlock emerging functionalities in opto-spintronic and current-driven devices. Beyond its role in magnetization reversal, the effective anisotropy can strongly influence the magnetotransport response, offering an additional degree of freedom to tune new device functionalities. In this work, we report a magnetotransport study of a ferrimagnetic [Tb/Co]$_{\times 5}$ multilayer grown with a Tb thickness gradient, whose wedge-shaped tilts the uniaxial anisotropy axis slightly away from the film normal. Anomalous Hall resistivity measurements from 80 K to 300 K reveal a spin reorientation transition, while the angular dependence of the magnetotransport responses exposes the crucial role of the tilted anisotropy. A simplified macrospin model reproduces the full angular response across the transition and shows that the observed anomalous Hall effect when the in-plane magnetic field is applied originates from the tilt of the uniaxial anisotropy axis, which supplies a built-in symmetry-breaking mechanism, enabling in-plane field control over the out-of-plane anomalous Hall response, sign included. These findings establish tilted magnetic anisotropy as a promising route toward Hall effect-based sensor applications and highlight Tb/Co multilayers as a versatile platform for anisotropy-engineered spintronic devices.

cond-mat.mes-hall