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arXiv · 2603.05856

Twist-Controlled Modulation of Quantum Emitters in a Van der Waals Bilayer

Angus Gale·Seungjun Lee·Seungmin Park·Evan Williams·Helen Zhi Jie Zeng·James Liddle-Wesolowski·Young Duck Kim·Milos Toth·Tony Low·Igor Aharonovich
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Abstract

Stacking and twisting two dimensional materials has garnered enormous attention across the condensed matter and the nanophotonic communities. The surge of interest stems from the emergence of novel photophysical phenomena that arise due to the interlayer coupling of the individual layers. Here, we demonstrate that the twist degree of freedom can modulate a single quantum emitter at room temperature. We employ a van der Waals homobilayer of hexagonal boron nitride (hBN) and model the emission properties of quantum emitters as a function of the twist angle. Density functional theory results show that the embedded emitters are strongly influenced by the twist angle and the stacking of the top hBN layer. We consequently engineer these systems experimentally, and demonstrate in-situ tuning of embedded quantum emitters by mechanically twisting the top hBN layer, achieving tunability of over 30 nm (~ 100 meV). Our work demonstrates that mechanical twisting can be harnessed to modulate the embedded quantum emitters in a vdW material, marking a crucial step towards a programmable on-chip quantum circuitry.

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Angus Gale, Seungjun Lee, Seungmin Park, Evan Williams, Helen Zhi Jie Zeng, James Liddle-Wesolowski, Young Duck Kim, Milos Toth, Tony Low, Igor Aharonovich. 2026-03-06. Twist-Controlled Modulation of Quantum Emitters in a Van der Waals Bilayer. https://arxiv.org/abs/2603.05856

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