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arXiv · 2603.10907

Sliding Ferroelectricity Driven Spin-Layertronics in Altermagnetic Multilayers

Rui Peng·Guangxu Su·Yangyang Fan·Jiaan Li·Fanxin Liu·Yee Sin Ang
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Abstract

The synergy of ferroicity with altermagnetism offers a novel platform for designing multifunctional altermagnetic-spintronic device technology. In this work, we propose a mechanism to achieve nonvolatile electrical manipulation of spin and layer degrees of freedom in an altermagnetic bilayer via sliding ferroelectricity. Using first-principles calculations, we show that an interlayer translation can induce a switchable out-of-plane ferroelectric polarization in bilayer CuF2, which directly couples to and reverses the d-wave altermagnetic spin splitting. Notably, the altermangetic spin splitting is layer-locked, the sliding ferroelectricity-driven switching thus embodying a nonvolatile spin-layertronics functionality that couples spin-polarized transport and layer degree of freedom in a single platform. We show that in quadrilayer CuF2, four polarization states are identified which may offer multi-state logic device applications. These findings establish sliding ferroelectricity as a versatile tool for designing voltage-controlled, high-speed and energy-efficient spin-layertronic devices based on altermagnets.

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Rui Peng, Guangxu Su, Yangyang Fan, Jiaan Li, Fanxin Liu, Yee Sin Ang. 2026-03-11. Sliding Ferroelectricity Driven Spin-Layertronics in Altermagnetic Multilayers. https://arxiv.org/abs/2603.10907

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