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arXiv · 2603.22578

Benchmarking Dual-Polarization Silicon Nitride Photonic Integrated Circuits for Trapped-Ion Quantum Technologies

Carl-Frederik Grimpe·Anastasiia Lüßmann-Sorokina·Guochun Du·Pragya Sah·Steffen Sauer·Elena Jordan·Rijil Thomas·Pascal Gehrmann·Maksim Lipkin·Stephan Suckow·Max C. Lemme·Stefanie Kroker·Tanja E. Mehlstäubler
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Abstract

Trapped ions are one of the most advanced platforms for quantum technologies, with applications ranging from quantum computing to precision timekeeping. A crucial step towards more compact and scalable systems involves integrating photonic integrated circuits (PICs) into surface ion traps to enable on-chip light delivery and optical addressing of individual ions. Currently, most implementations rely solely on transverse-electric (TE) mode grating couplers, where the emitted light is polarized in the plane of the chip. In this work, we design, fabricate and characterize silicon nitride (Si\(_3\)N\(_4\)) PIC components, including incoupling structures, splitters, and grating couplers that support both TE and transverse-magnetic (TM) modes with comparable optical losses. We benchmark the PIC at 760\,nm, which is a typical wavelength for Yb$^{+}$-applications. The fabricated grating couplers enable the outcoupling of collimated free-space beams for both polarizations, exhibiting distinct emission angles. This dual-polarization capability gives more flexibility in polarization control and expands the accessible optical design space for trapped-ion quantum technologies.

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Carl-Frederik Grimpe, Anastasiia Lüßmann-Sorokina, Guochun Du, Pragya Sah, Steffen Sauer, Elena Jordan, Rijil Thomas, Pascal Gehrmann, Maksim Lipkin, Stephan Suckow, Max C. Lemme, Stefanie Kroker, Tanja E. Mehlstäubler. 2026-03-23. Benchmarking Dual-Polarization Silicon Nitride Photonic Integrated Circuits for Trapped-Ion Quantum Technologies. https://doi.org/10.1051/jeos%2F2026049

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