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arXiv · 2603.22740

Hydrogenation-induced gigantic resistance decrease of palladium films deposited by high pressure magnetron sputtering

Yusuke Ikeda·Takuya Kawada·Yuki Shiomi
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Abstract

We demonstrate a pronounced decrease in the electrical resistance of highly disordered palladium (Pd) films deposited under a high working Ar pressure using a compact film coating system. The resulting resistance change ratio of up to $1/335$ is predominant among those reported previously. Film characterization suggests two primary mechanisms responsible for this significant resistance reduction: atomic force microscopy observation indicates improved electrical contacts among Pd grains, and X-ray diffraction measurement demonstrates hydrogenation-induced crystallization of Pd. These findings offer a simple scheme to enhance hydrogen sensor performance and can contribute to a more comprehensive understanding of the hydrogenation process in Pd.

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Yusuke Ikeda, Takuya Kawada, Yuki Shiomi. 2026-03-24. Hydrogenation-induced gigantic resistance decrease of palladium films deposited by high pressure magnetron sputtering. https://doi.org/10.1063/5.0304819

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