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arXiv · 2603.27731

Electrically and Magnetically Tunable Charge-Density-Wave Transport in Quasi-2D h-BN/1T-TaS2 Thin-Film Heterostructures

Jonas O. Brown·Maedeh Taheri·Nicholas R. Sesing·Tina T. Salguero·Alexander A. Balandin
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Abstract

Controlling collective electronic phases in low-dimensional materials is a central challenge for developing technologies based on charge-density waves. Here, we report that perpendicular electric and magnetic fields can be used to tune charge-density-wave transport in the quasi-two-dimensional material 1T-TaS2. Using h-BN-encapsulated thin-film heterostructures with both top-gate and bottom-gate configurations, we find that electrical gating produces a non-monotonic shift in the depinning threshold, a behavior distinct from that of quasi-one-dimensional charge-density-wave systems. We further show that a perpendicular magnetic field increases the threshold voltage for domain depinning and can drive the nearly commensurate-to-incommensurate charge-density-wave phase transition, demonstrating magnetic control over a two-dimensional electron-lattice condensate. The obtained results shed light on mechanisms governing charge-density-wave domain dynamics and reveal combined electrical and magnetic-field control as a strategy for engineering low-power-dissipation devices and electronics for extreme environments.

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Jonas O. Brown, Maedeh Taheri, Nicholas R. Sesing, Tina T. Salguero, Alexander A. Balandin. 2026-03-29. Electrically and Magnetically Tunable Charge-Density-Wave Transport in Quasi-2D h-BN/1T-TaS2 Thin-Film Heterostructures. https://arxiv.org/abs/2603.27731

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