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arXiv · 2604.03795

Optimizing Flux Method Growth of Rutile GeO2 Crystals

Avery-Ryan Ansbro·John T. Heron
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Abstract

Rutile germanium oxide (r-GeO2) has shown potential for ultrawide bandgap semiconductor applications such as power conversion and UV optoelectronics. Homoepitaxial substrates will be key for achieving phase pure and doped r-GeO2 thin films as synthesis is inhibited by strain associated with substrate lattice mismatch. Initial reports of single crystal r-GeO2 synthesis from a MoO3-Li2CO3 flux have shown mm scale crystals with dominantly (110) faceting. However, fundamental understanding of the synthesis parameters and the ability to tune size and facet are needed. Here, we report on both seeded and unseeded growth of single crystal r-GeO2 across a range of MoO3-Li2CO3 flux compositions. Small variations in Mo concentration can be used to control crystal habit, faceting, and growth rate through variation in precursor complexion, solution viscosity, and GeO2 solubility. While seed size and seeded growth rates are optimized in 40% Mo solutions, aspect ratios and seeded growth volumes are maximized in 41.5% Mo solutions without sacrificing faceting. Increased Mo concentration leads to polycrystallinity and isotropic growth. These results enable faster and tailored growth of r-GeO2 crystals using the flux growth method.

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Avery-Ryan Ansbro, John T. Heron. 2026-04-04. Optimizing Flux Method Growth of Rutile GeO2 Crystals. https://arxiv.org/abs/2604.03795

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