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arXiv · 2604.06351

Tunable Valley Polarization in Diamond

Nattakarn Suntornwipat·Jan Isberg·Saman Majdi
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Abstract

Device stability is essential for quantum information technologies, where reliable control of electronic states is crucial. Diamond valleytronics offers a promising platform by exploiting the valley degree of freedom to store and manipulate information. In this work, we demonstrate a diamond-based valley transistor with a dual-gate, two-drain architecture that enables tunable valley-polarized transport via gate voltage modulation. By leveraging the significant effective-mass anisotropy of diamond's conduction band valleys, this architecture provides control over spatial distribution and transit times. We further demonstrate that valley-polarized transport in diamond is remarkably robust against thermal variations over macroscopic distances. These results demonstrate the resilience of valley states and highlight diamond's potential for energy-efficient valleytronic devices in next-generation quantum and high-power electronics.

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Nattakarn Suntornwipat, Jan Isberg, Saman Majdi. 2026-04-07. Tunable Valley Polarization in Diamond. https://arxiv.org/abs/2604.06351

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