Gate-dependent offset charge shifts and anharmonicity in gatemon qubits in the weak tunneling regime

Utkan Güngördü; Rusko Ruskov; Silas Hoffman; Kyle Serniak; Andrew J. Kerman; Charles Tahan

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arXiv · 2604.24716

Gate-dependent offset charge shifts and anharmonicity in gatemon qubits in the weak tunneling regime

Utkan Güngördü·Rusko Ruskov·Silas Hoffman·Kyle Serniak·Andrew J. Kerman·Charles Tahan

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Abstract

Gatemon qubits are based on a superconductor-quantum dot-superconductor (S-QD-S) junction which enables in situ electrostatic tuning via a gate electrode. For a single-channel QD this structure gives rise to two subgap Andreev bound states (ABSs), and generally leads to a richer quantum phase dynamics as compared to conventional transmons. In a recent work [Phys. Rev. B 111, 214503 (2025)] we derived the quantum phase dynamics from a many-body treatment which leads to an effective gate voltage-dependent Hamiltonian that self-consistently incorporates the phase quantization. It predicts (i) a renormalization of the junction's effective capacitance and (ii) the presence of gate voltage and occupation-dependent charge offsets in junctions with tunneling asymmetry. Here, we quantify the observable impact of these effects on the qubit's energy spectrum and anharmonicity, by studying the interplay of the two Andreev branches as a function of dot-gate voltages and junction transparencies. We show the relation of these predictions to simplified gatemon models and propose a protocol to experimentally detect the predicted charge offsets.

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Utkan Güngördü, Rusko Ruskov, Silas Hoffman, Kyle Serniak, Andrew J. Kerman, Charles Tahan. 2026-04-27. Gate-dependent offset charge shifts and anharmonicity in gatemon qubits in the weak tunneling regime. https://arxiv.org/abs/2604.24716

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