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arXiv · 2605.03840

Initial Development of MBE-Grown InAs Diodes for Thermoradiative Energy Harvesting

I. Artacho·I. Ramiro·A. Martí
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Abstract

We describe the development of 1x1 mm2 InAs thermoradiative diodes grown by molecular beam epitaxy with emphasis on their reverse saturation current and break-down voltage. P-i-n diode structures grown at 450 C, with As2 flux around 3 times stoichiometry and an In effusion cell tip temperature 150 C higher than the base temperature, exhibit the best results with breakdown voltages above 0.3 V and reverse saturation current densities 200 times the radiative limit.

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I. Artacho, I. Ramiro, A. Martí. 2026-05-05. Initial Development of MBE-Grown InAs Diodes for Thermoradiative Energy Harvesting. https://arxiv.org/abs/2605.03840

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