Defect Localization by Vanishing Deviatoric Stress in Active Nematics

Sameer Kumar; Manas Khan

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arXiv · 2606.17595

Defect Localization by Vanishing Deviatoric Stress in Active Nematics

Sameer Kumar·Manas Khan

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Abstract

Collective stress generation in cellular monolayers is a key phenomenological process governing coordinated migration and emergent multicellular dynamics. We employ a generic active nematics model to investigate stress generation and its associated properties. By analyzing the maximal principal stress and its correlation with the nematic director across different activity strengths, we find that the principal stress aligns perpendicular (parallel) to the nematic director for extensile (contractile) activity. In the turbulent regime, we identify a rotation-invariant scalar measure of the in-plane deviatoric stress whose zero-level contour coincides with the locations of all $\pm 1/2$ topological defects (both nematic and principal stress defects) are localized. This feature is robust and remains unchanged with variations in both the magnitude and nature (extensile or contractile) of activity. Our findings thus open up a new route to probe the spatial alignment from the mechanical and rheological properties of confluent cell layers, where stress measurements are more accessible than detailed cell shape or size characterisation.

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Sameer Kumar, Manas Khan. 2026-06-16. Defect Localization by Vanishing Deviatoric Stress in Active Nematics. https://arxiv.org/abs/2606.17595

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