SearcharxivSearch

arXiv · 2606.19254

Spin point group symmetry and classification of non-relativistic spin splitting in non-collinear magnetic structures: Identification of high-order spin splitting types (l=5,7, and 9)

Abstract

A comprehensive study of the possible types of non-relativistic spin splitting of electronic bands in coplanar and non-coplanar magnetic structures is presented on the basis of spin-group theory. First, we tabulate all non-equivalent spin point groups (SpPGs) which can be expressed as a direct product of a nontrivial part and a spin-only group limited to be the intrinsic (trivial) one, or augmented by the time-reversal (TR) operation. This tabulation, which includes the listing of symmetry operations for 1249 nonequivalent SpPGs, is now available as an online database SPGENPOS in the Bilbao Crystallographic Server (BCS). This extends previous enumerations, in which the possible presence of TR in the magnetic point group was not taken into account, thus overlooking the full SpPG symmetry associated with the numerous magnetic structures which have a magnetic space group of type IV. For each of the listed coplanar and non-coplanar SpPGs, the spin-splitting that is symmetry allowed is analyzed in detail using the program STENSOR also in the BCS. Except for the SpPGs that include the operation 1', i.e., the combined operation of TR and space inversion, all other coplanar and non-coplanar SpPGs allow spin splitting at some order in a power expansion of the electron wave vector components. We find that, depending on the SpPG, spin-splitting terms can appear with the lowest-order monomials ranging from l=0 to 9, with the exception of l=8. This contrasts with the collinear case, where the lowest order is not higher than l=6, and where TR forbids any spin splitting. For the newly identified spin textures with powers l=5, 7, and 9, which are possible in some noncentrosymmetric SpPGs, the functional form of the spin splitting in terms of the components of the crystal momentum is given. One example of a real material, LaMnAu5, showing l=5 spin splitting is identified.

Explore related subjects

Keep this discovery

BibTeXRIS

Luis Elcoro, Jesus Etxebarria, J. Manuel Perez-Mato, Emre S. Tasci. 2026-06-17. Spin point group symmetry and classification of non-relativistic spin splitting in non-collinear magnetic structures: Identification of high-order spin splitting types (l=5,7, and 9). https://arxiv.org/abs/2606.19254

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci