SearcharxivSearch

arXiv · 2606.22654

Pyroelectric and electrocaloric properties of core-shell HfxZr1-xO2 nanoparticles: theory and experiment

Abstract

Nanosized hafnia-zirconia (HfxZr1-xO2) in the form of thin films, multilayers, and nanoparticles is one of the most promising CMOS-compatible ferroelectric materials for advanced electronic memories and logic devices. Using the Landau-Ginzburg-Devonshire free energy functional with trilinear and biquadratic couplings of polar, nonpolar, and antipolar order parameters, we analyze the pyroelectric and electrocaloric properties in an ensemble of spherical core-shell HfxZr1-xO2 nanoparticles. To test the theoretical model, we experimentally measured the temperature dependence of the electric charge accumulated in pressed powders consisting of oxygen-deficient core-shell Hf0.5Zr0.5O2 nanoparticles with an average size of 7 nm. The observed temperature-dependent behavior of the accumulated charge and its derivative are in qualitative agreement with the calculated polarization and pyroelectric coefficient for the ensemble of densely packed spherical core-shell HfxZr1-xO2 nanoparticles; this suggests that the theoretical model captures the physical mechanisms responsible for the experimentally observed charge accumulation. The combined theoretical and experimental results provide a physical foundation for the future development of CMOS-compatible HfxZr1-xO2 nanoparticles for pyroelectric and electrocaloric applications.

Explore related subjects

Keep this discovery

BibTeXRIS

Anna N. Morozovska, Oleksandr S. Pylypchuk, Nicholas V. Morozovsky, Eugene A. Eliseev, Dean R. Evans. 2026-06-21. Pyroelectric and electrocaloric properties of core-shell HfxZr1-xO2 nanoparticles: theory and experiment. https://arxiv.org/abs/2606.22654

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci