Peculiarities Of High-Speed Dynamics Of Two-Photon Absorption In Si Nanowire Waveguides

Abstract

We investigate the complete dynamical pathway of photon-electron interactions involved in two-photon absorption (TPA) in a silicon nanowire waveguide using three independent high-speed measurement techniques. These methods probe different stages of the process: nonlinear photon absorption, electron excitation from the valence to the conduction band, and free-carrier generation. According to the conventional model of TPA, these three processes should occur at identical rates. However, our measurements reveal significant discrepancies between them. The measured nonlinear photon absorption is more than twice the value required to account for the measured TPA transitions, indicating the presence of additional absorption pathways or nontrivial TPA dynamics. Furthermore, the number of measured TPA transitions substantially exceeds the measured free-carrier density, indicating that long-lifetime free carriers represent only a small fraction of the TPA-excited electrons, while the majority recombine rapidly back to the valence band on a timescale shorter than 13 ps. In addition, the three stages of the TPA pathway exhibit distinct saturation behaviors at different photon densities, further indicating that the TPA process in silicon is more complex than described by the conventional model. These findings provide new insight into the physical mechanisms governing TPA, suggesting the existence of multiple competing pathways for this optical transition. A major obstacle to a complete understanding of TPA is the unclear physical origin of the virtual midgap level. The potential strategies for minimizing unwanted nonlinear losses in high-speed silicon photonic circuits, as well as for exploiting TPA in high-speed optical switching and photonic signal processing are investigated.