Substrate-dependent electrical transport in individual single-walled carbon nanotubes grown across SiO$_2$ and hexagonal boron nitride

Abstract

The electronic transport properties of carbon nanotubes (CNTs) are strongly affected by their surrounding environment, making the underlying substrate a critical factor for device performance. Here, we demonstrate enhanced carrier transport of individual single-walled CNTs on hexagonal boron nitride (hBN) by directly comparing CNT channels on SiO$_2$ and hBN within the same nanotube. This within-tube comparison removes tube-to-tube variability in chirality, diameter, and defect density, allowing the intrinsic substrate effect to be evaluated more reliably. The CNTs were synthesized using gas flow-directed growth, which yields long, well-aligned CNTs without transfer processes, allowing a single nanotube to extend across different substrate regions. Multichannel field-effect transistors fabricated along an individual CNT exhibit clear ambipolar characteristics. CNT channels on hBN consistently exhibit higher field-effect mobility than those on SiO$_2$. In contrast, temperature-dependent transport near the charge neutrality point exhibits thermally activated behavior with similar activation energies (15-20 meV) on both substrates, indicating that the intrinsic small bandgap of CNTs is largely unaffected by the substrate. These results provide direct evidence that hBN enhances low-field carrier transport in CNTs and establish a foundation for the fabrication of high-performance electronics based on hBN-supported CNTs.