First principles study of chalcogen vacancy effect on the optoelectronic and photocatalytic properties of transition metal dichalcogenides monolayers

Abstract

In working conditions, chalcogen vacancies spontaneously occur in two-dimensional transition metal dichalcogenides (TMDCs) monolayers, affecting their optoelectronic and photocatalytic properties. To study how chalcogen vacancies affect such properties, we use quantum mechanical calculations considering prototypical MX$_2$ (M = Mo, W, X = S and Se) TMDCs monolayers. Structural optimisations show that M-X bond lengths about a vacancy are different compared to the bond lengths in the pristine structure. Band structure calculations reveal that the introduction of vacancies produce electronic states about the Fermi level, hence resulting in the reduction of the band gap. Work function and electrostatic potential calculations show that the introduction of vacancies induce an asymmetry in the electrostatic potential facilitating the charge separation; such feature is absent in a pristine monolayer. All the considered defective structures are capable of performing hydrogen evolution reaction, while co-catalyst is required to perform oxygen evolution reaction when used for water splitting. WS$_2$ and WSe$_2$ defective monolayers can serve as an efficient photocatalytic material for reducing CO$_2$ into useful chemical products. The presented results show that vacancy-containing TMDCs monolayers own photocatalytic capabilities compared to the pristine counterparts, thus showing that defective TMD monolayers have prospective applications and should not be regarded as flawed products to be discarded. Finally, the results might constitute guidelines for the experimental synthesis of vacancy-engineered MX$_2$ monolayers for optoelectronic devices and photocatalytic applications.