Nonlinear Hall effect in Floquet-driven monolayer 1T$'$-MoS$_2$

Abstract

We study the nonlinear Hall effect in Floquet-driven monolayer \(1T'\)-MoS\(_2\), a low-symmetry quantum spin Hall material whose tilted Dirac bands sustain an intrinsic Berry-curvature dipole without the need for strain or trigonal warping. We show that off-resonant circularly polarized light offers a way to control both the sign and the magnitude of the nonlinear Hall response through optically induced topological phase transitions using a Floquet effective Hamiltonian and nonlinear semiclassical transport theory. We show that the anisotropic crystal symmetry enforces a selection rule in which the Berry-curvature dipole elements satisfy $D_x\equiv0$, while a finite $D_y$ originates from the intrinsic band tilt. The Berry curvature is recreated in momentum space as the Floquet drive successively inverts individual spin-valley sectors, resulting in an identical sign reversal of the nonlinear Hall conductivity and the Berry-curvature dipole at each bulk gap closing. In contrast, tuning the band tilt modifies only the magnitude of the response without changing its sign, establishing the observed sign reversal as an unambiguous transport signature of genuine Floquet topological phase transitions. We further show that the nonlinear Hall response can be controlled by the driving strength, perpendicular electric field, Fermi energy, and temperature, providing multiple experimental knobs for observation. Our findings establish the sign of the nonlinear Hall response as a universal transport fingerprint of Floquet-engineered topology and point to monolayer \(1T'\)-MoS\(_2\) as a viable platform for all-electrical detection of nonequilibrium topological phases.