arXiv · 2607.12191
Phase-Controlled Epitaxy and Anisotropic Antiferromagnetism of Polar Wurtzite MnTe
Abstract
Altermagnetic spintronics requires materials in which compensated magnetic order, symmetry-controlled electronic responses, and epitaxial tunability can be combined in experimentally accessible thin films. MnTe is a key material in this context, but experimental studies have focused mainly on the stable NiAs-type polymorph, whereas the polar wurtzite phase remains largely unexplored. Here we demonstrate molecular-beam epitaxy growth and investigate properties of nearly phase-pure wurtzite MnTe deposited directly on GaAs(111)B, and show that small changes in the growth conditions strongly modify the phase composition, from a multiphase state with endotaxial NiAs-type inclusions embedded in wurtzite MnTe matrix to an almost single-phase polar wurtzite layer.
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Janusz Sadowski, Jaroslaw Z. Domagala, Piotr Dziawa, Anna Kaleta, Sania Dad, Maciej Wójcik, Dorota Janaszko, Sławomir Kret, Oleksii Liubchenko, Maciej Sawicki, Katarzyna Gas. 2026-07-13. Phase-Controlled Epitaxy and Anisotropic Antiferromagnetism of Polar Wurtzite MnTe. https://arxiv.org/abs/2607.12191
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