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arXiv · 2608.09611

Buried germanium quantum well proximitised by magnetic field-resilient superconducting platinum iridium germanosilicide

Praveen Viswanathan·Erik Lemmens Sjöstrand·Davide Costa·Marinus Fischer·Athique Ahmed·Sara Martí-Sánchez·Lucas E. A. Stehouwer·Jordi Arbiol·Anasua Chatterjee·Giordano Scappucci·Karina L. Hudson
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Abstract

Hybrid superconductor-semiconductor systems provide a versatile platform for quantum technologies, ranging from superconducting-spin interfaces to topological quantum devices. Progress toward scalable implementations requires superconductors that exhibit high critical fields ($>1$T) at accessible temperatures integrated with low-disorder semiconductor heterostructures. Here we demonstrate a superconducting platinum iridium germanosilicide (PtIrSiGe), with critical out-of-plane magnetic field up to $B_{\perp} = 1.9$T and critical temperature of $T_c\sim 1.85$K, integrated with planar germanium with mobility $\mu = 1.3\times 10^6$cm$^{2}$/Vs via top-down lithography fabrication. We show that the integrity of the germanium quantum well and mobility and density of the 2D hole gas are preserved despite annealing at $500\deg$C, a temperature comparable to that used for strained germanium epitaxy. We further demonstrate proximitisation of a buried germanium quantum well in a gate-defined Josephson junction/SQUID on a Ge/SiGe heterostructure.

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Praveen Viswanathan, Erik Lemmens Sjöstrand, Davide Costa, Marinus Fischer, Athique Ahmed, Sara Martí-Sánchez, Lucas E. A. Stehouwer, Jordi Arbiol, Anasua Chatterjee, Giordano Scappucci, Karina L. Hudson. 2026-08-10. Buried germanium quantum well proximitised by magnetic field-resilient superconducting platinum iridium germanosilicide. https://arxiv.org/abs/2608.09611

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