SearcharxivSearch

arXiv · 2608.21037

Sulfur-rich Spirofluorene-Bridged N Heterotriangulene Redox-Active Polymers

Abstract

Sulfur-rich spirofluorene-bridged N-heterotriangulene (FTN) polymers featuring covalently linked oligosulfide units and a terthiophene-based analogue were synthesized via nucleophilic aromatic substitution and Stille cross-coupling polymerization. The resulting materials are amorphous, insoluble solids with high thermal stability and sulfur contents up to 25 wt%. Structural and compositional analyses by combustion analysis, ToF-SIMS, FT-IR, XPS, and solid-state NMR confirm the efficient incorporation of short oligosulfide to disulfide linkages and well-defined terthiophene units in the respective polymers. Electrochemical characterization in lithium half-cells reveals a reversible, high-voltage oxidation of the FTN unit at 3.8-4.0 V (vs. Li/Li+), accompanied by low-voltage sulfur- or terthiophene-based redox processes between 1.5-2.5 V (vs. Li/Li+). Sulfur incorporation markedly increases the theoretical and initial discharge capacities (up to 129 mA h g-1), while the sulfide conversion processes exhibit rapid fading and poor reversibility due to sulfide dissolution. In contrast, the terthiophene-linked polymer shows only transient low-voltage activity while maintaining high Coulombic efficiencies (ca. 99.7%) governed by the persistent FTN backbone redox event. Our results highlight how different redox-active linkers influence the electrochemical behavior of FTN-based polymers and provide insights into the design of functional organic cathode materials featuring multi-redox processes.

Explore related subjects

Keep this discovery

BibTeXRIS

Angelina Jocic, Tom Wickenhäuser, Sebastian Lindenthal, Alexander Welle, Vanessa Trouillet, Ronald Curticean, Irene Wacker, Jana Zaumseil, Rasmus R. Schröder, Rüdiger Klingeler, Milan Kivala. 2026-08-21. Sulfur-rich Spirofluorene-Bridged N Heterotriangulene Redox-Active Polymers. https://doi.org/10.1016/j.synthmet.2026.118233

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci