Switchable giant room-temperature nonlinear Hall effect in Bilayer Graphene

Abstract

Utilizing quantum second-order nonlinear transport for practical junction-free devices require materials with large and tunable nonlinearites at room temperature -- a current materials platform challenge. Here, we report the nonlinear Hall effect (NLHE) in double-ionic gated bilayer graphene devices that enable unusually strong inversion breaking. We observe NLHE that are readily switchable (on, off, and sign reversed) with second order nonlinear susceptibilities $\chi^{(2)}_{yxx}$ that reaches giant room-temperature values of $3\,10^{-3}\,\mu\mathrm{m}\,\mathrm{S/V}$, comparable to values commonly observed at low temperature in WTe$_2$ or in graphene-based moir\'e superlattices, and three-to-four orders of magnitude larger than values reported in material systems recently employed in search of a room-temperature NLHE. Our devices produce corresponding THz voltage responsivities $\simeq 4\,10^{4}\,\mathrm{V/W}$, comparable to commercially available Schottky diodes. These are orders of magnitude better than for previously reported room-temperature NLHE devices rendering double-ionic gated bilayer graphene a choice platform for junction-free nonlinear technology.