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arXiv · 2608.29338

Analogue Phase Change Computational Memory with High Precision Reads and Energy Efficient Writes

Ghazi Sarwat Syed·Loris Coccia·Vara Prasad Jonnalagadda·Antonio Massimiliano Mio·Asit Ray·Matthew BrightSky·Abu Sebastian
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Abstract

Resistive memory technologies offer a compelling advantage for in-memory computing. However, realizing a device architecture that simultaneously achieves high computational precision, efficiency, and density has remained elusive due to inherent trade-offs among these performance metrics. Here, we introduce a com- pact phase-change memory device architecture that combines an ultra-confined active switching volume for enhanced electro-thermal efficiency with a non-insulating thin film that suppresses temporal conductance fluctuations. We analytically model and back-end integrate these devices into crossbar arrays. Even with conventional, undoped phase-change materials, the device architecture enables a computational precision approaching 6 bits, low conductance values below 50 {\mu}S with an adequate conductance window, and a viable pathway toward sub-100 {\mu}A programming currents under nominal operating voltages.

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Ghazi Sarwat Syed, Loris Coccia, Vara Prasad Jonnalagadda, Antonio Massimiliano Mio, Asit Ray, Matthew BrightSky, Abu Sebastian. 2026-08-29. Analogue Phase Change Computational Memory with High Precision Reads and Energy Efficient Writes. https://arxiv.org/abs/2608.29338

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