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arXiv · 2609.11992

Crystallographic and Electronic Phase Changes in TiTe2 via Atmospheric and Electron Beam Exposure

Bishal Pokhrel·Joel Quarnstrom·Saraswati Shrestha·Halle Helfrich·Elena Echeverria·David N. McIlroy·Andrew J. Yost
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Abstract

In this study, we examine the surface sensitivity of a transition metal dichalcogenide (TiTe2) grown using the Chemical Vapor Transport (CVT) technique at high pressure and study the surface changes in the sample upon exposure to air as well as its crystallographic properties upon e-beam exposure. We examine the local density of States (LDOS) of the mechanically exfoliated sample surface before and after exposure using Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and find a metal-to-semiconductor transition at the surface. The STM analysis shows a clear change in surface roughness which indicates the formation of an adlayer on the surface of the sample. The crystal structure was examined using X-ray Diffraction (XRD) and Transmission Electron Microscopy (TEM), indicating a phase transition from a single-crystalline hexagonal phase to a polycrystalline state via a distorted monoclinic phase. Furthermore, the presence of a possible superlattice suggests non-stoichiometric TixTey at the surface of the exposed layer.

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Bishal Pokhrel, Joel Quarnstrom, Saraswati Shrestha, Halle Helfrich, Elena Echeverria, David N. McIlroy, Andrew J. Yost. 2026-09-09. Crystallographic and Electronic Phase Changes in TiTe2 via Atmospheric and Electron Beam Exposure. https://arxiv.org/abs/2609.11992

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