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arXiv · 2609.18771

Photoresponse properties of single-crystalline thick film based on high-entropy topological insulator (Bi3/4Sb1/4)2(Te2/5Se2/5S1/5)3

Alexei Vasilev·Marina Zhezhu·Oleg Ivanov
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Abstract

High-entropy topological insulator (Bi3/4Sb1/4)2(Te2/5Se2/5S1/5)3 has been for the first time prepared by self-propagating high-temperature synthesis and melting methods. Single-crystalline thick-filmed sample with thickness of ~0.1 mm was applied to examine the photoresponse properties by using room-temperature chopped-light technique. Photodetector based on (Bi3/4Sb1/4)2(Te2/5Se2/5S1/5)3 demonstrated strong photovoltaic response under irradiation of a white LED light, covering 420-730 nm range. The photocurrent increases from ~20 to ~55 mkA with the increase in intensity from 100 to 600 W/m2 that is originated from the increase in the number of non-equilibrium carriers generated by light. Room-temperature responsivity and detectivity of the photodetector are ~8.7 mA/W and ~109 Jones, respectively.

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Alexei Vasilev, Marina Zhezhu, Oleg Ivanov. 2026-09-16. Photoresponse properties of single-crystalline thick film based on high-entropy topological insulator (Bi3/4Sb1/4)2(Te2/5Se2/5S1/5)3. https://doi.org/10.1016/j.matlet.2025.139293

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