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arXiv · 2609.22727

Understanding Ideality Factor in Wide-Band Gap Semiconductor Devices with Strong Recombination Planes

Iris Celupica-Liu·Tanay Tak·Yuh-Renn Wu·James S. Speck
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Abstract

Ideality factor of a diode will depend on the location of the plane of maximum recombination within the diode's depletion region. It will have a minimum of one, but can range up to infinity depending on placement of the plane. Case studies analyzed in this work demonstrate better agreement with experimental data from GaN-based p-i-n diodes.

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Iris Celupica-Liu, Tanay Tak, Yuh-Renn Wu, James S. Speck. 2026-09-19. Understanding Ideality Factor in Wide-Band Gap Semiconductor Devices with Strong Recombination Planes. https://arxiv.org/abs/2609.22727

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