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arXiv · 2609.23000

Analysis and Design of Desaturation Short-Circuit Protection for SiC MOSFET Under High Switching Voltage Transients

Ravi Teja Pogulaguntla·Arun Karuppaswamy B
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Abstract

Short-circuit protection is vital for ensuring the safe operation of high-power-density power converters using Silicon Carbide (SiC) MOSFETs. However, adapting conventional desaturation (DESAT) protection, originally designed for Silicon (Si) IGBTs, is challenging due to the significantly shorter shortcircuit withstand time of SiC devices, typically less than 3μs. Nevertheless, DESAT protection can be adapted for SiC MOSFETs through certain circuit modifications. This article provides a comprehensive analysis and design guidelines for the three architectural variants of DESAT protection circuits, specifically for adjusting the short-circuit detection time suitable for SiC MOSFETs. Further, this article establishes a quantitative framework to evaluate the noise induced into the DESAT protection circuits during turn-off dv/dt switching transients. From this analysis, a design methodology and safe operating boundary are derived for each DESAT configuration, guiding the systematic selection of component values to balance dv/dt noise margin and short-circuit detection speed for SiC MOSFETs. Experimental results are presented to validate the analysis.

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Ravi Teja Pogulaguntla, Arun Karuppaswamy B. 2026-09-19. Analysis and Design of Desaturation Short-Circuit Protection for SiC MOSFET Under High Switching Voltage Transients. https://arxiv.org/abs/2609.23000

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