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arXiv · 2610.10353

Exciton switching and tunable exciton-phonon coupling in Oxygen doped ZnO nanorods

Aiswarya Rath·Kalyan Ghosh·Pratap K Sahoo
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Abstract

Self ion doping in ZnO nanorods offers a powerful route to dynamically control excitonic states and light matter interactions. Here, vertically aligned hexagonal ZnO nanorods were irradiated with 250 keV oxygen ions to establish a direct link between irradiation induced defects and excitonic and optical responses. Increasing ion fluence progressively quenches the near band edge emission at 380 nm, leading to a complete exciton OFF state, while thermal annealing restores the emission, yielding a reversible exciton OFF or ON response. This switching originates from defect mediated modification and thermal recovery of excitonic states. The defect band emission, between 400 to 750 nm, exhibits quasi periodic whispering gallery mode like resonances that are progressively suppressed as irradiation alters nanorod geometry and optical confinement. Low-temperature photoluminescence resolves D0X, FX 1LO, and FX 2LO transitions, whose temperature evolution follows the Bose Einstein model. The non-monotonic variation of excition phonon coupling strength reveals a competition among irradiation induced defects, lattice distortion, and exciton localization in determining exciton phonon coupling. These results establish Oxygen ion irradiation as a means to simultaneously engineer excitonic switching, exciton phonon interactions, and optical resonances, providing a pathway toward defect programmable ZnO nanophotonic and optoelectronic devices.

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Aiswarya Rath, Kalyan Ghosh, Pratap K Sahoo. 2026-10-07. Exciton switching and tunable exciton-phonon coupling in Oxygen doped ZnO nanorods. https://arxiv.org/abs/2610.10353

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