Searcharxiv⌕ Search

arXiv · 2610.19259

Topologically Protected Surface Acoustic Wave Edge States in Phononic Integrated Circuits

Abstract

Phononic integrated circuits enable the development of compact systems to manipulate radio frequency signals through interconnected networks of acoustic waveguides. Introducing topologically protected robustness in these circuits to counter fabrication imperfections and local perturbations, remains a challenge. This work presents a validated modeling framework for topologically protected edge states using surface acoustic waves in etch-defined waveguides consisting of scandium aluminum nitride on silicon carbide, directly comparing analytical, full-wave numerical simulation, and laser Doppler vibrometer measured experimental approaches and their agreement. This work represents the first experimental demonstration of topological edge states on a ScAlN on SiC platform, validated through direct quantitative comparison with analytical and numerical analyses, with future implications for topological protection in phononic and optomechanical integrated circuit platforms.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Jack Guida, Niccolo Scalise Pantuso, Cristian Cassella, Sunil Mittal, Siddhartha Ghosh. 2026-10-13. Topologically Protected Surface Acoustic Wave Edge States in Phononic Integrated Circuits. https://arxiv.org/abs/2610.19259

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Warhead Verification with Neutron Beams and Electric Cryptography

Future arms control treaties may need to reliably verify warheads for dismantlement as part of the treaty verification process without exposing carefully guarded weapons information. Neutron Resonance Transmission Analysis has been proposed as a strategy to verify the authenticity of nuclear warheads and warhead components slated for dismantlement in an arms control verification exercise. Most actinides have resonant neutron absorption lines in the eV region, so by measuring the energy resolved transmission of neutrons and observing the resulting isotope-specific absorption lines, the authenticity of a nuclear device can be verified. To ensure acceptance of this technique by treaty partners, the measurement should minimize information learned about the warhead, including both geometric and isotopic features. Past implementations of transmission analysis acquired and compared neutron time-of-flight spectra. We have developed an analog electric cryptographic measurement proof of concept system where only counts in specific resonance energy windows are observed. The system uses discrete analog components, producing a complete data acquisition and analysis circuit. By limiting the design to easily verifiable parts, the entire apparatus is transparent to authentication and certification. The information security provided by this analog measurement technique may make it the verification basis of future ambitious arms control treaties that explicitly stipulate the dismantlement of nuclear weapons.

physics.app-ph↗

Impact of Structural Design on Magneto-Mechanical Resonators: The Case of a Jewel Bearing Variant

Magneto-mechanical resonators (MMRs) are passive, wirelessly read sensors whose small size, miniaturizability, and low cost make them attractive for tracking and for sensing physical and chemical quantities. Their operation relies on a permanent-magnet rotor whose mechanical resonance encodes the sensing and tracking information. The bearing suspending this rotor is therefore decisive both for in-operation performance and for manufacturability. The original design suspends the rotor on a thin thread, which is nontrivial to assemble. This work investigates the impact of that structural design choice by introducing an alternative bearing in which the spherical rotor magnet rests in a cup-shaped industrial jewel. A dynamic model of this Jewel-MMR is derived, including the angle-dependent dry friction torque at the jewel contact. From it, a geometric trade-off between friction torque and resilience against unwanted oscillation modes is identified. Since the conventional quality factor loses its meaning under dominant dry friction, a two-tiered framework is proposed that compares MMR variants by estimation precision at equal magnet size and natural frequency. Both variants are characterized at a fixed pose on a Helmholtz-coil detection platform. The Jewel-MMR is self-aligning, requires fewer adhesive bonds and alignment steps, and the prototypes built here were assembled in less than half the time. Its response signal decays faster, so that under laboratory noise conditions the natural frequency and the orientation are recovered more precisely from the thread variant; these orientation figures quantify repeatability, not absolute accuracy. The jewel bearing, however, tolerates larger deflection angles and thus a stronger signal, which reverses this relation above a noise level determined in a simulation-based robustness analysis, indicating an advantage at reduced signal-to-noise ratio.

physics.app-ph↗

Effect of deep-trap density of states for a-Si:H layers on HIT cell performances: Modeling Framework

In this work, an aSi and cSi heterojunction solar cell with an intrinsic layer is simulated using AFORS-HET software. The study focuses on the role of the electronic density of states DOS of the amorphous emitter, p type aSiH, in governing the performance of the HIT cell and the electronic transfer across the heterointerface. It is found that the DOS of the p type aSiH emitter can cause an unfavorable recombination and trapping effect, which becomes more severe and difficult to avoid when the bulk dangling-bond density in the a-Si emitter approaches or exceeds the doping concentration. An increase in deep trap density beyond a critical value causes a drop in the built in voltage and shifts the depletion layer into p type aSi. This situation leads to a sharp decline in HIT cell performance, namely the open circuit voltage and the fill factor, and to the appearance of an S shaped IV characteristic. The simulation results suggest that the emitter activation energy needs to be optimized to achieve high efficiency. Under optimal conditions, holes accumulate near the heterojunction interface, leading to the formation of an inversion layer. This paper presents a physical mechanism for recombination processes within the emitter and concludes with the optimized parameters required to achieve a HIT cell efficiency comparable to Sanyo record of 23 percent on a thin silicon wafer.

physics.app-ph↗