Searcharxiv⌕ Search
Home/Archive/arXiv

arXiv · 2610.34996

Rigid Band Shift in Electron-Doped Kagome Metal

M. Pinterić·E. Uykur·S. Salters·G. Pokharel·S. D. Wilson·M. Dressel·M. Wenzel
View original source ↗Read source document ↗Export metadata ↓

Abstract

We study the effects of Sn-site doping on the electronic structure of nonmagnetic kagome metal YV$_6$Sn$_{6-x}$Sb$_x$ by infrared spectroscopy and density-functional theory. The results for samples with $x$ = 0 and 1.4 demonstrate that partial substitution of Sn by Sb acts as a rigid shift of the Fermi level while leaving the band dispersion largely intact. Our findings establish Sn-site substitution in YV$_6$Sn$_6$ as a route to systematically investigate band-filling-dependent electronic properties of nonmagnetic kagome metals.

Explore related subjects

cond-mat.mtrl-scicond-mat.str-el

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

M. Pinterić, E. Uykur, S. Salters, G. Pokharel, S. D. Wilson, M. Dressel, M. Wenzel. 2026-10-26. Rigid Band Shift in Electron-Doped Kagome Metal. https://arxiv.org/abs/2610.34996

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Anomalous mass renormalization in two-dimensional electron systems on ultra-wide bandgap semiconductor $β$-Ga$_2$O$_3$

Two-dimensional electron systems (2DESs) at wide-bandgap semiconductor surfaces and interfaces are fertile ground for emergent quantum phenomena. Here, we use micro-focused angle-resolved photoemission spectroscopy (ARPES) to resolve the momentum-space electronic structure of a surface 2DES in $β$-Ga$_2$O$_3$, an ultra-wide bandgap semiconductor with a band gap of 4.7 eV. In situ electron doping of cleaved, high-purity $β$-Ga$_2$O$_3$ single crystals produces an essentially circular Fermi surface. With the self-consistent Poisson-Schrödinger model, the 2D electrons are estimated to be confined within approximately 1.2 nm beneath the surface, with an internal electric field of approximately 18 MV cm$^{-1}$. Our analysis based on ARPES measurements reveals nearly a twofold increase in the electron mass at high sheet carrier densities. This trend deviates from the conventional behavior reported for wide-bandgap semiconductors and indicates mass renormalization beyond the conventional screening-based picture. Our results provide quantitative momentum-space benchmarks for the Fermi-surface geometry and density-dependent quasiparticle dispersion of the $β$-Ga$_2$O$_3$ 2DES, opening a route to studying density-tunable interfacial quantum states in the UWBG regime.

cond-mat.mtrl-sci↗
arXiv2026

CrystalREPA: Transferring Physical Priors from Universal MLIPs to Crystal Generative Models

Crystal generative models mainly learn what stable crystals look like, with little explicit supervision for what makes them stable. We reveal a substantial representation gap between state-of-the-art crystal generative models and pretrained universal machine learning interatomic potentials (MLIPs) via energy probing, and show this gap can be closed by a simple training-time alignment. We propose Crystal REPresentation Alignment (CrystalREPA), a plug-and-play framework that aligns the atom-wise hidden states of generative encoders with frozen MLIP representations through an element-aware contrastive objective, transferring stability-aware atomistic priors with marginal training overhead and no additional inference cost. Across three generative frameworks, ten MLIP teachers, and two benchmark datasets, CrystalREPA consistently improves the thermodynamic stability, structural validity, and structural fidelity of generated crystals. Equally important, we find that an MLIP's transfer effectiveness is poorly predicted by its accuracy on standard leaderboards (e.g., Matbench Discovery) but strongly predicted by the distinguishability of its atom-wise representation space, yielding a practical, accuracy-independent criterion for selecting MLIP teachers for generative transfer. Code is available at https://github.com/Chengqian-Zhang/CrystalREPA.

cond-mat.mtrl-sci↗
arXiv2026

Implications of an analysis of the shear transformation of a zone of an oblate spheroid for dislocation theory, grain boundary sliding and superplasticity

Grain boundary sliding models of superplastic flow take the elementary event to be the shear of an oblate-spheroidal unit embedded in a solid matrix, whose rate follows transition state theory. The mechanics of this unit, and the assumptions linking it to dislocations and macroscopic flow, have not been stated explicitly. Here the unit is analysed as an Eshelby inclusion, a continuum, mathematical treatment without using physical concepts. The analysis gives closed-form shear and volumetric energy coefficients ($0.4456$ and $0.8889$ for aspect ratio $1/2$ and Poisson ratio $1/3$) and shows that the shear stress of the unit is a force dipole, decaying as $r^{-3}$ and changing sign with direction, unlike a dislocation. The inputs, assumptions and proposals needed to connect this unit of shear to dislocation theory and superplastic flow are then stated and classed as experimentally validated, physically realistic or fitting constants. Under three such proposals, a row of about four units acquires the Peierls-Nabarro profile of a full dislocation, and two to three units that of a Shockley partial; the Peierls and Frank-Read stresses and the stacking-fault energy then follow from experimental inputs. With the unit energy as the free energy of activation and strains fitted to superplastic data, the flow law reproduces all 52 measured strain rates of a Cu alloy within an order of magnitude. Molecular-dynamics calculations for Cu outline the extension to dislocation emission, mesoscopic grain boundary sliding and the inverse Hall-Petch effect. This gives phenomenological models of superplastic flow a mechanical basis.

cond-mat.mtrl-sci↗