Growth Pattern of Silicon Clusters

Atul Bahel; Jun Pan; Mushti V. Ramakrishna

doi:10.1142/s0217984995000759

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arXiv · chem-ph/9506003

Growth Pattern of Silicon Clusters

Atul Bahel·Jun Pan·Mushti V. Ramakrishna

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Abstract

Tight-binding molecular dynamics simulated annealing technique is employed to search for the ground state geometries of silicon clusters containing 11-17 atoms. These studies revealed that layer formation is the dominant growth pattern in all these clusters. Fullerene-like precursor structures consisting of fused pentagon rings are also observed. The atoms in all these clusters exhibit pronounced preference for residing on the surface.

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Atul Bahel, Jun Pan, Mushti V. Ramakrishna. 1995-06-03. Growth Pattern of Silicon Clusters. https://doi.org/10.1142/s0217984995000759

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