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arXiv · cond-mat/0001040

Critical exponents at the superconductor-insulator transition in dirty-boson systems

Abstract

I obtain the inverse of the correlation length exponent at the superfluid-Bose glass quantum critical point as a series in small parameter $\sqrt{d-1}$, with d being the dimensionality of the system, and compute the first two terms using a novel field-theoretic technique. For d=2 I find $ν_s = 0.81$ and $ν_c = 1.03$, for short-range and Coulomb interactions between bosons, respectively. When combined with the exact values of the dynamical critical exponents $z_s = d$ and $z_c = 1$, these results are in quantitative agreement with the experiments on onset of superfluidity in $^4 He$ in porous glasses, and on superconductor-insulator transition in homogeneous metallic films, in support of the dirty-boson theory fot the latter. Higher-order calculation of the exponents and of the universal conductivity is discussed.

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BibTeXRIS

Igor F. Herbut. 2000-06-04. Critical exponents at the superconductor-insulator transition in dirty-boson systems. https://doi.org/10.1103/physrevb.61.14723

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