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Small Angle Shubnikov-de Haas Measurements in Silicon MOSFET's: the Effect of Strong In-Plane Magnetic Field

Sergey A. Vitkalov·Hairong Zheng·K. M. Mertes·M. P. Sarachik·T. M. Klapwijk
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Abstract

Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of two increase of the frequency of Shubnikov-de Haas oscillations at H>H_{sat}. This signals the onset of full spin polarization above H_{sat}, the parallel field above which the resistivity saturates to a constant value. For H<H_{sat}, the phase of the second harmonic of the oscillations relative to the first is consistent with scattering events that depend on the overlap instead of the sum of the spin-up and spin-down densities of states.

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Sergey A. Vitkalov, Hairong Zheng, K. M. Mertes, M. P. Sarachik, T. M. Klapwijk. 2000-04-20. Small Angle Shubnikov-de Haas Measurements in Silicon MOSFET's: the Effect of Strong In-Plane Magnetic Field. https://doi.org/10.1103/physrevlett.85.2164

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