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Thermopower in p-type GaAs/AlGaAs layers

M. Tsaousidou·P. N. Butcher·P. A. Crump·R. J. Hyndman·B. L. Gallagher
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Abstract

We explain for the first time thermopower data for p-type GaAs/AlGaAs layers. The data span a temperature range between 0.2 to 1.2K. We calculate both the diffusion $S^{d}$ and the phonon-drag $S^{g}$ contributions to the thermopower. We find that $S^{d}$ is significant for temperatures up to 0.3K while at higher temperatures $S^{g}$ dominates. The calculated and measured $S^{g}$ agree very well with no adjustable parameters.

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M. Tsaousidou, P. N. Butcher, P. A. Crump, R. J. Hyndman, B. L. Gallagher. 2000-04-17. Thermopower in p-type GaAs/AlGaAs layers. https://arxiv.org/abs/cond-mat/0004274

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