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Shubnikov-de Haas oscillations near the metal-insulator transition in a two-dimensional electron system in silicon

S. V. Kravchenko·A. A. Shashkin·David A. Bloore·T. M. Klapwijk
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Abstract

We have studied Shubnikov-de Haas oscillations in a two-dimensional electron system in silicon at low electron densities. Near the metal-insulator transition, only "spin" minima of the resistance at Landau-level filling factors 2, 6, 10, and 14 are seen, while the "cyclotron" minima at filling factors 4, 8, and 12 disappear. A simple explanation of the observed behavior requires a giant enhancement of the spin splitting near the metal-insulator transition.

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S. V. Kravchenko, A. A. Shashkin, David A. Bloore, T. M. Klapwijk. 2000-07-03. Shubnikov-de Haas oscillations near the metal-insulator transition in a two-dimensional electron system in silicon. https://doi.org/10.1016/s0038-1098(00)00361-6

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