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X-ray induced persistent photoconductivity in Si-doped Al$_{0.35}$Ga$_{0.65}$As

Yeong-Ah Soh·G. Aeppli·Frank M. Zimmermann·E. D. Isaacs·Anatoly I. Frenkel
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Abstract

We demonstrate that X-ray irradiation can be used to induce an insulator-metal transition in Si-doped Al$_{0.35}$Ga$_{0.65}$As, a semiconductor with {\it DX} centers. The excitation mechanism of the {\it DX} centers into their shallow donor state was revealed by studying the photoconductance along with fluorescence. The photoconductance as a function of incident X-ray energy exhibits an edge both at the Ga and As K-edge, implying that core-hole excitation of Ga and As are efficient primary steps for the excitation of {\it DX} centers. A high quantum yield ($\gg 1$) suggests that the excitation is indirect and nonlocal, due to secondary electrons, holes, and fluorescence photons.

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Yeong-Ah Soh, G. Aeppli, Frank M. Zimmermann, E. D. Isaacs, Anatoly I. Frenkel. 2000-07-29. X-ray induced persistent photoconductivity in Si-doped Al$_{0.35}$Ga$_{0.65}$As. https://doi.org/10.1063/1.1410894

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