Sensitivity of a micromechanical displacement detector based on the radio-frequency single-electron transistor

Miles P. Blencowe; Martin N. Wybourne

doi:10.1063/1.1331090

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Sensitivity of a micromechanical displacement detector based on the radio-frequency single-electron transistor

Miles P. Blencowe·Martin N. Wybourne

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Abstract

We investigate the tunneling shot noise limits on the sensitivity of a micromechanical displacement detector based on a metal junction, radio-frequency single-electron transistor (rf-SET). In contrast with the charge sensitivity of the rf-SET electrometer, the displacement sensitivity improves with increasing gate voltage bias and, with a suitably optimized rf-SET, displacement sensitivities of $10^{-6} {\rmÅ}/\sqrt{\rm Hz}$ may be possible.

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Miles P. Blencowe, Martin N. Wybourne. 2000-09-19. Sensitivity of a micromechanical displacement detector based on the radio-frequency single-electron transistor. https://doi.org/10.1063/1.1331090

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