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Critical behavior of the thermoelectric transport properties in amorphous systems near the metal-insulator transition

C. Villagonzalo·R. A. Roemer·M. Schreiber·A. MacKinnon
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Abstract

The scaling behavior of the thermoelectric transport properties in disordered systems is studied in the energy region near the metal-insulator transition. Using an energy-dependent conductivity $σ$ obtained experimentally, we extend our linear-response-based transport calculations in the three-dimensional Anderson model of localization. Taking a dynamical scaling exponent $z$ in agreement with predictions from scaling theories, we show that the temperature-dependent $σ$, the thermoelectric power $S$, the thermal conductivity $K$ and the Lorenz number $L_0$ obey scaling.

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C. Villagonzalo, R. A. Roemer, M. Schreiber, A. MacKinnon. 2000-09-27. Critical behavior of the thermoelectric transport properties in amorphous systems near the metal-insulator transition. https://arxiv.org/abs/cond-mat/0009425

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