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Magnetotunneling in a Two-Dimensional Electron-Hole System Near Equilibrium

E. M. González·Y. Lin·E. E. Mendez
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Abstract

We have measured the zero-bias differential tunneling conductance of InAs/AlSb/GaS b/AlSb/InAs heterostructures at low temperatures (1.7K < T < 60K) and unde r a magnetic field at various angles with the heterostructure's interfaces. Shubni kov-de Haas oscillations in the magnetoconductance reveal the two-dimensional (2D) character of the electrons accumulated at the InAs interfaces and yield their num ber in each of them. The temperature dependence of the oscillations suggests the f ormation of a field-induced energy gap at the Fermi level, similar to that observe d before in simpler 2D-2D tunneling systems. A calculation of the magnetoconductan ce that considers different 2D densities in the two InAs electrodes agrees with th e main observations, but fails to explain features that might be related to the pr esence of 2D holes in the GaSb region.

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E. M. González, Y. Lin, E. E. Mendez. 2000-09-28. Magnetotunneling in a Two-Dimensional Electron-Hole System Near Equilibrium. https://doi.org/10.1103/physrevb.63.033308

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