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Hole spin polarization in GaAlAs:Mn structures

A. Ghazali·I. C. da Cunha Lima·M. A. Boselli
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Abstract

A self-consistent calculation of the electronic properties of GaAlAs:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin polarization density is obtained for several structure configurations. Available experimental results are compared with theory.

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A. Ghazali, I. C. da Cunha Lima, M. A. Boselli. 2001-01-29. Hole spin polarization in GaAlAs:Mn structures. https://doi.org/10.1103/physrevb.63.153305

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