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Current noise in long diffusive SNS junctions in the incoherent MAR regime

E. V. Bezuglyi·E. N. Bratus'·V. S. Shumeiko·G. Wendin
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Abstract

Spectral density of current fluctuations at zero frequency is calculated for a long diffusive SNS junction with low-resistive interfaces. At low temperature, T << Delta, the subgap shot noise approaches linear voltage dependence, S=(2/ 3R)(eV + 2Delta), which is the sum of the shot noise of the normal conductor and voltage independent excess noise. This result can also be interpreted as the 1/3-suppressed Poisson noise for the effective charge q = e(1+2Delta/eV) transferred by incoherent multiple Andreev reflections (MAR). At higher temperatures, anomalies of the current noise develop at the gap subharmonics, eV = 2Delta/n. The crossover to the hot electron regime from the MAR regime is analyzed in the limit of small applied voltages.

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E. V. Bezuglyi, E. N. Bratus', V. S. Shumeiko, G. Wendin. 2001-01-16. Current noise in long diffusive SNS junctions in the incoherent MAR regime. https://doi.org/10.1103/physrevb.63.100501

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