Point defects on III-V semiconductor surfaces

G. Schwarz; J. Neugebauer; M. Scheffler

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Point defects on III-V semiconductor surfaces

G. Schwarz·J. Neugebauer·M. Scheffler

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Abstract

The basic properties of point defects (atomic geometry, the position of charge-transfer levels, and formation energies) on the (110) surface of GaAs, GaP, and InP have been calculated employing density-functional theory. Based on these results we discuss the electronic properties of surface defects, defect segregation, and compensation.

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G. Schwarz, J. Neugebauer, M. Scheffler. 2000-10-23. Point defects on III-V semiconductor surfaces. https://arxiv.org/abs/cond-mat/0010342

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