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New Physics of the $30^\circ$ Partial Dislocation in Silicon Revealed through {\em Ab Initio} Calculation

Gabor Csanyi·Torkel D. Engeness·Sohrab Ismail-Beigi·T. A. Arias
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Abstract

Based on {\em ab initio} calculation, we propose a new structure for the fundamental excitation of the reconstructed 30$^\circ$ partial dislocation in silicon. This soliton has a rare structure involving a five-fold coordinated atom near the dislocation core. The unique electronic structure of this defect is consistent with the electron spin resonance signature of the hitherto enigmatic thermally stable R center of plastically deformed silicon. We present the first {\em ab initio} determination of the free energy of the soliton, which is also in agreement with the experimental observation. This identification suggests the possibility of an experimental determination of the density of solitons, a key defect in understanding the plastic flow of the material.

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Gabor Csanyi, Torkel D. Engeness, Sohrab Ismail-Beigi, T. A. Arias. 2000-11-09. New Physics of the $30^\circ$ Partial Dislocation in Silicon Revealed through {\em Ab Initio} Calculation. https://doi.org/10.1088/0953-8984%2F12%2F49%2F302

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