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Frequency Dependence of Aging, Rejuvenation and Memory in a disordered ferroelectric

J. P. Bouchaud·P. Doussineau·T. de Lacerda-Arôso·A. Levelut
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Abstract

We characterize in details the aging properties of the ferroelectric phase of K Ta_{1-x} Nb_x O_3 (KTN), where both rejuvenation and (partial) memory are observed. In particular, we carefully examine the frequency dependence of several quantities that characterize aging, rejuvenation and memory. We find a marked subaging behaviour, with an a.c. dielectric susceptiblity scaling as $ω\sqrt{t_w}$, where $t_w$ is the waiting time. We suggest an interpretation in terms of pinned domain walls, much along the lines proposed for aging in a disordered ferromagnet, where both domain wall reconformations and overall (cumulative) domain growth are needed to rationalize the experimental findings.

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J. P. Bouchaud, P. Doussineau, T. de Lacerda-Arôso, A. Levelut. 2000-11-10. Frequency Dependence of Aging, Rejuvenation and Memory in a disordered ferroelectric. https://doi.org/10.1007/s100510170175

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