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Band-structure trend in hole-doped cuprates and correlation with Tcmax

E. Pavarini·I. Dasgupta·T. Saha-Dasgupta·O. Jepsen·O. K. Andersen
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Abstract

By calculation and analysis of the bare conduction bands in a large number of hole-doped high-temperature superconductors, we have identified the energy of the so-called axial-orbital as the essential, material-dependent parameter. It is uniquely related to the range of the intra-layer hopping. It controls the Cu 4s-character, influences the perpendicular hopping, and correlates with the observed Tc at optimal doping. We explain its dependence on chemical composition and structure, and present a generic tight-binding model.

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E. Pavarini, I. Dasgupta, T. Saha-Dasgupta, O. Jepsen, O. K. Andersen. 2001-04-06. Band-structure trend in hole-doped cuprates and correlation with Tcmax. https://doi.org/10.1103/physrevlett.87.047003

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