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Effects of a parallel magnetic field on the novel metallic behavior in two dimensions

K. Eng·X. G. Feng·Dragana Popovic·S. Washburn
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Abstract

Magnetoconductance (MC) in a parallel magnetic field B has been measured in a two-dimensional electron system in Si, in the regime where the conductivity decreases as σ(n_s,T,B=0)=σ(n_s,T=0) + A(n_s)T^2 (n_s -- carrier density) to a non-zero value as temperature T->0. Very near the B=0 metal-insulator transition, there is a large initial drop in σwith increasing B, followed by a much weaker σ(B). At higher n_s, the initial drop of MC is less pronounced.

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K. Eng, X. G. Feng, Dragana Popovic, S. Washburn. 2000-12-05. Effects of a parallel magnetic field on the novel metallic behavior in two dimensions. https://arxiv.org/abs/cond-mat/0012063

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