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Influence of nano-mechanical properties on single electron tunneling: A vibrating Single-Electron Transistor

Daniel Boese·Herbert Schoeller
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Abstract

We describe single electron tunneling through molecular structures under the influence of nano-mechanical excitations. We develop a full quantum mechanical model, which includes charging effects and dissipation, and apply it to the vibrating C$_{60}$ single electron transistor experiment by Park {\em et al.} {[Nature {\bf 407}, 57 (2000)].} We find good agreement and argue vibrations to be essential to molecular electronic systems. We propose a mechanism to realize negative differential conductance using local bosonic excitations.

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Daniel Boese, Herbert Schoeller. 2000-12-08. Influence of nano-mechanical properties on single electron tunneling: A vibrating Single-Electron Transistor. https://doi.org/10.1209/epl%2Fi2001-00367-8

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