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Fabrication and Characterization of Boron Carbide / n-Silicon Carbide Heterojunction Diodes

S. Adenwalla·P. Welsch·A. Harken·J. I. Brand·A. Sezer·B. W. Robertson
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Abstract

The fabrication, initial structural characterization and diode measurements are reported for the first boron carbide / silicon carbide heterojunction diode. Current-voltage curves obtained for operation at temperatures from 24 C to 388 C. PECVD-deposited undoped boron carbide material is highly crystalline and consists of a variety of polytypes of B-C with crystal sizes as large as 110 nm. Crystal phases are similar to those for PECVD B-C on Si but only partially match known boron and boron-rich B-C phases.

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S. Adenwalla, P. Welsch, A. Harken, J. I. Brand, A. Sezer, B. W. Robertson. 2001-01-17. Fabrication and Characterization of Boron Carbide / n-Silicon Carbide Heterojunction Diodes. https://arxiv.org/abs/cond-mat/0101267

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