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Electron-Electron Relaxation Effect on Auger Recombination in Direct Band Semiconductors

Anatoli Polkovnikov·Georgy Zegrya
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Abstract

Influence of electron-electron relaxation processes on Auger recombination rate in direct band semiconductors is investigated. Comparison between carrier-carrier and carrier-phonon relaxation processes is provided. It is shown that relaxation processes are essential if the free path length of carriers doesn't exceed a certain critical value, which exponentially increases with temperature. For illustration of obtained results a typical InGaAsP compound is used.

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Anatoli Polkovnikov, Georgy Zegrya. 2001-01-21. Electron-Electron Relaxation Effect on Auger Recombination in Direct Band Semiconductors. https://doi.org/10.1103/physrevb.64.073205

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